Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35325

Title:	Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures
Authors:	Kuo,C. H.;Kuo,C. W.;Chen,C. M.;Pong,B. J.;Chi,G. C.
Contributors:	光電科學與工程學系
Keywords:	QUATERNARY EPILAYERS;GAN;EFFICIENCY;LEDS
Date:	2006
Issue Date:	2010-07-07 14:10:33 (UTC+8)
Publisher:	中央大學
Abstract:	The authors have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal organic chemical vapor deposition. They found that the surfaces of the LEDs with p-AlInGaN layers are rough with high density of hexago
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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