Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35382

Title:	Diffusion barrier of sputtered W film for Cu Schottky contacts on InGaP layer
Authors:	Lee,CT;Liu,DS;Deng,RW
Contributors:	光電科學與工程學系
Keywords:	INGAP/GAAS/INGAP MSM PHOTODETECTORS;ELECTRICAL-PROPERTIES;THERMAL RELIABILITY;FAILURE-MECHANISM;COPPER;SILICON;CU/AU;GAAS;MICROSTRUCTURE;MULTILAYERS
Date:	2004
Issue Date:	2010-07-07 14:12:43 (UTC+8)
Publisher:	中央大學
Abstract:	To improve the thermal stability of Schottky performances, a refractory diffusion barrier layer of W is used for impeding the indiffusion of Cu into the JnGaP layer. From the atomic force microscopy measurements for W/Cu Schottky contacts to the InGaP lay
Relation:	THIN SOLID FILMS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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