English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65421/65421 (100%)
Visitors : 22326978      Online Users : 404
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35429


    Title: Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature
    Authors: Tu,RC;Tun,CJ;Pan,SM;Chuo,CC;Sheu,JK;Tsai,CE;Wang,TC;Chi,GC
    Contributors: 光電科學與工程學系
    Keywords: LOW-OPERATION VOLTAGE;OHMIC CONTACTS;LASER-DIODES;SUPERLATTICE;POWER
    Date: 2003
    Issue Date: 2010-07-07 14:14:33 (UTC+8)
    Publisher: 中央大學
    Abstract: The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vap
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML344View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明