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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35438


    Title: Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air
    Authors: Lee,CT;Lin,YJ;Lee,TH
    Contributors: 光電科學與工程學系
    Keywords: P-TYPE GAN;N-TYPE GAN;ELECTRICAL-PROPERTIES;PHOTOELECTRON;DEFECTS;LAYERS
    Date: 2003
    Issue Date: 2010-07-07 14:14:53 (UTC+8)
    Publisher: 中央大學
    Abstract: Recently, Au/Ni/p-type GaN ohmic contacts annealed in an air ambient have been widely investigated. However, to obtain a low specific-contact resistance, the annealing window is limited. In this study, to understand the oxidation function of metallic Ni,
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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