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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35456


    Title: Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures
    Authors: Chen,CC;Hsueh,TH;Ting,YS;Chi,GC;Chang,CA;Wang,SC
    Contributors: 光電科學與工程學系
    Keywords: P-TYPE GAN;WURTZITE GAN;EMISSION;DEFECTS;CONTACT;INN
    Date: 2003
    Issue Date: 2010-07-07 14:15:46 (UTC+8)
    Publisher: 中央大學
    Abstract: In this work, the variation of the optical gain in the InGaN/GaN quantum well after thermal annealing is simulated. The potential profile change of the quantum well resulting from the interdiffusion of Ga and In atoms across the interface of the well and
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[Department of Optics and Photonics] journal & Dissertation

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