English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67783/67783 (100%)
Visitors : 23099244      Online Users : 196
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35547


    Title: Nonalloyed GaAs metal-semiconductor field effect transistor
    Authors: Lee,CT;Huang,JH;Tsai,CD
    Contributors: 光電科學與工程學系
    Keywords: MOLECULAR-BEAM EPITAXY;OHMIC CONTACTS;MULTIQUANTUM BARRIER;THERMAL-STABILITY;RESISTANCE;MESFET;LAYER;TEMPERATURE;INAS/INGAAS
    Date: 2000
    Issue Date: 2010-07-07 14:35:39 (UTC+8)
    Publisher: 中央大學
    Abstract: A novel GaAs metal-semiconductor field-effect transistor (MESFET) with Al0.25Ga0.75As/GaAs multiquantum barrier (MQB) buffer layer and narrow band InAs/graded InGaAs capping layer was demonstrated. The MQB buffer layer can improve the sidegating effect an
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML459View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明