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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35712


    Title: Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy
    Authors: Pan,CJ;Tu,CW;Song,JJ;Cantwell,G;Lee,CC;Pong,BJ;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: ROOM-TEMPERATURE;THIN-FILMS;EMISSION;GAN
    Date: 2005
    Issue Date: 2010-07-07 15:49:35 (UTC+8)
    Publisher: 中央大學
    Abstract: Photoluminescence (PL) of homoepitaxial and heteroepitaxial ZnO films grown by plasma-assisted molecular beam epitaxy is studied. Homoepitaxial ZnO layers were grown oil an O-face melt-grown ZnO (000 1) substrate. Heteroepitaxial ZnO layers were grown on
    Relation: JOURNAL OF CRYSTAL GROWTH
    Appears in Collections:[光電科學研究中心] 期刊論文

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