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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35728


    Title: InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
    Authors: Wen,TC;Chang,SJ;Su,YK;Wu,LW;Kuo,CH;Lai,WC;Sheu,JK;Tsai,TY
    Contributors: 光電科學研究中心
    Keywords: BARRIER GROWTH TEMPERATURE;GAN;BLUE;SI;LAYER
    Date: 2003
    Issue Date: 2010-07-07 15:50:09 (UTC+8)
    Publisher: 中央大學
    Abstract: High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from we
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[光電科學研究中心] 期刊論文

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