English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 22655956      Online Users : 263
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35752


    Title: Characterization of Si implants in p-type GaN
    Authors: Sheu,JK;Lee,ML;Tun,CJ;Kao,CJ;Yeh,LS;Chang,SJ;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: MG-DOPED GAN;YELLOW LUMINESCENCE;ION-IMPLANTATION;ELECTRICAL-PROPERTIES;OHMIC CONTACT;PHOTOLUMINESCENCE;BAND;ACTIVATION;PHOTODETECTORS;TEMPERATURE
    Date: 2002
    Issue Date: 2010-07-07 15:50:34 (UTC+8)
    Publisher: 中央大學
    Abstract: Si ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N-2 has been performed. X-ray diffraction analyses indicate that ion-implanted damage remains even with 1050 degreesC, 60 s RTA. By varying implantation and postimplantation
    Relation: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML530View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明