English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65318/65318 (100%)
Visitors : 21625870      Online Users : 227
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35790


    Title: Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer
    Authors: Sheu,JK;Tsai,JM;Shei,SC;Lai,WC;Wen,TC;Kou,CH;Su,YK;Chang,SJ;Chi,GC
    Contributors: 光電科學研究中心
    Keywords: INDIUM TIN OXIDE;OHMIC CONTACT;N-GAN;ACTIVATION
    Date: 2001
    Issue Date: 2010-07-07 15:51:13 (UTC+8)
    Publisher: 中央大學
    Abstract: InGaN/GaN multiple-quantum-well light-emitting diode (LED) structures including a Si-doped In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer were grown by metalorganic vapor phase epitaxy. The In0.23Ga0.77N/GaN(n(+))-GaN(p) tunneli
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML695View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明