GaN, ZnO and InN nanowires and devices

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38183

Title:	GaN, ZnO and InN nanowires and devices
Authors:	Pearton,S. J.;Kang,B. S.;Gila,B. P.;Norton,D. P.;Kryliouk,O.;Ren,F.;He,Young-Woo;Chang,Chih-Yang;Chi,Gou-Chung;Wang,Wei-Ming;Chen,Li-Chyong
Contributors:	物理研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;GALLIUM NITRIDE NANOWIRES;MOLECULAR-BEAM EPITAXY;INDIUM NITRIDE;SELECTIVE DETECTION;ROOM-TEMPERATURE;BUILDING-BLOCKS;TRANSPORT-PROPERTIES;CARBON NANOTUBES;CATALYTIC GROWTH
Date:	2008
Issue Date:	2010-07-08 13:19:31 (UTC+8)
Publisher:	中央大學
Abstract:	A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electro
Relation:	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY????
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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