Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition

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題名:	Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition
作者:	Kao,CJ;Kwon,YW;Heo,YW;Norton,DP;Pearton,SJ;Ren,F;Chi,GC
貢獻者:	物理研究所
關鍵詞:	THIN-FILM TRANSISTORS;CONTACT RESISTANCE;SCHOTTKY CONTACTS;SURFACE BARRIERS;DEEP LEVELS;ZINC-OXIDE;N-ZNO;MOBILITY;CHANNEL;AG
日期:	2005
上傳時間:	2010-07-08 13:27:49 (UTC+8)
出版者:	中央大學
摘要:	ZnO thin film field effect transistors with 1.5-20 mu m gate width were fabricated using either a metal gate [metal-semiconductor field effect transistor (MESFET)] or a metal-oxide-semiconductor (MOS) gate. In both cases we found that use of a thick (simi
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
顯示於類別:	[物理研究所] 期刊論文

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