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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38466


    Title: Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes
    Authors: Yang,HS;Han,SY;Heo,YW;Baik,KH;Norton,DP;Pearton,SJ;Ren,F;Osinsky,A;Dong,JW;Hertog,B;Dabiran,AM;Chow,PP;Chernyak,L;Steiner,T;Kao,CJ;Chi,GC
    Contributors: 物理研究所
    Keywords: MOLECULAR-BEAM EPITAXY;P-TYPE ZNO;THIN-FILMS;GROWTH;SAPPHIRE;POLARITY;DEPOSITION;TEMPLATES;MGXZN1-XO;EPILAYERS
    Date: 2005
    Issue Date: 2010-07-08 13:28:11 (UTC+8)
    Publisher: 中央大學
    Abstract: We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
    Appears in Collections:[物理研究所] 期刊論文

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