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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38546


    Title: W2B-based ohmic contacts to n-GaN
    Authors: Khanna,R;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
    Contributors: 物理研究所
    Keywords: ELECTRON-MOBILITY TRANSISTORS;ALGAN/GAN HETEROSTRUCTURES;THERMAL-STABILITY;RESISTANCE;TI/AL;TI/AL/MO/AU;MICROSTRUCTURE;METALLIZATION;IMPLANTATION;RESISTIVITY
    Date: 2005
    Issue Date: 2010-07-08 13:30:47 (UTC+8)
    Publisher: 中央大學
    Abstract: Ohmic contact formation on n-GaN using a novel Ti/Al/W2B/Ti/Au metallization scheme was studied using contact resistance, scanning electron microscopy and Auger electron spectroscopy measurements. A minimum specific contact resistivity of 7 x 10(-6) ohm c
    Relation: APPLIED SURFACE SCIENCE
    Appears in Collections:[物理研究所] 期刊論文

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