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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38547


    Title: W2B-based rectifying contacts to n-GaN
    Authors: Khanna,R;Pearton,SJ;Ren,F;Kravchenko,I;Kao,CJ;Chi,GC
    Contributors: 物理研究所
    Keywords: ELECTRON-MOBILITY TRANSISTORS;MULTILAYER OHMIC CONTACTS;W-SCHOTTKY CONTACTS;THERMAL-STABILITY;ALGAN/GAN HETEROSTRUCTURES;TI/AL/MO/AU;RESISTANCE;WSIX;METALLIZATION;IMPLANTATION
    Date: 2005
    Issue Date: 2010-07-08 13:30:48 (UTC+8)
    Publisher: 中央大學
    Abstract: Schottky contact formation on n-GaN using a novel W2B/Ti/Au metallization scheme was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy measurements. A maximum barrier height of 0.55 eV was achieved on as-deposited
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[物理研究所] 期刊論文

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