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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38578


    Title: Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
    Authors: Gwo,S;Wu,CL;Shen,CH;Chang,WH;Hsu,TM;Wang,JS;Hsu,JT
    Contributors: 物理研究所
    Keywords: FUNDAMENTAL-BAND GAP;MOLECULAR-BEAM EPITAXY;HEXAGONAL INN;INDIUM NITRIDE;DEPENDENCE
    Date: 2004
    Issue Date: 2010-07-08 13:31:47 (UTC+8)
    Publisher: 中央大學
    Abstract: High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-e
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[物理研究所] 期刊論文

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