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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38603


    Title: Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition
    Authors: Chen,WY;Chang,WH;Chou,AT;Hsu,TM;Chen,PS;Pei,ZW;Lai,LS
    Contributors: 物理研究所
    Keywords: PHONONLESS RADIATIVE RECOMBINATION;PHOTOLUMINESCENCE;ALIGNMENT;EXCITONS;WELLS;SI
    Date: 2004
    Issue Date: 2010-07-08 13:32:35 (UTC+8)
    Publisher: 中央大學
    Abstract: Photoluminescence spectroscopy has been used to study the optical properties of multiple stacked Ge/Si quantum dots (QDs) with different thickness of Si spacers inserted between the Ge dot layers. According to the emission energy of the stacked Ge/Si QDs,
    Relation: APPLIED SURFACE SCIENCE
    Appears in Collections:[物理研究所] 期刊論文

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