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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38663


    Title: GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
    Authors: Chang,SJ;Lee,ML;Sheu,JK;Lai,WC;Su,YK;Chang,CS;Kao,CJ;Chi,GC;Tsai,JA
    Contributors: 物理研究所
    Keywords: OXIDE SCHOTTKY CONTACTS;ULTRAVIOLET PHOTODETECTORS;N-GAN;DETECTORS
    Date: 2003
    Issue Date: 2010-07-08 13:34:32 (UTC+8)
    Publisher: 中央大學
    Abstract: Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (ITO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnit
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[物理研究所] 期刊論文

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