English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67783/67783 (100%)
Visitors : 23109461      Online Users : 237
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38667


    Title: Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes
    Authors: Chang,SJ;Chen,CH;Su,YK;Sheu,JK;Lai,WC;Tsai,JM;Liu,CH;Chen,SC
    Contributors: 物理研究所
    Keywords: LIGHT-EMITTING-DIODES;VOLTAGE
    Date: 2003
    Issue Date: 2010-07-08 13:34:40 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although t
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[物理研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML318View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明