GaN p-n junction diode formed by Si ion implantation into p-GaN

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38726

Title:	GaN p-n junction diode formed by Si ion implantation into p-GaN
Authors:	Lee,ML;Sheu,JK;Yeh,LS;Tsai,MS;Kao,CJ;Tun,CJ;Chang,SJ;Chi,GC
Contributors:	物理研究所
Keywords:	LIGHT-EMITTING DIODES;OHMIC CONTACT
Date:	2002
Issue Date:	2010-07-08 13:36:35 (UTC+8)
Publisher:	中央大學
Abstract:	Si-28(+) implantation into Mg-doped GaN, followed by thermal annealing in N-2 was performed to achieve n(+)-GaN layers. The carrier concentrations of the films changed from 3 x 10(17) (p-type) to 5 x 10(19) cm(-3) (n-type) when the Si-implanted p-type GaN
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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