Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38858

Title:	Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces
Authors:	Sheu,JK;Su,YK;Chi,GC;Jou,MJ;Liu,CC;Chang,CM;Hung,WC;Bow,JS;Yu,YC
Contributors:	物理研究所
Keywords:	INDUCTIVELY-COUPLED PLASMA;AL
Date:	2000
Issue Date:	2010-07-08 13:41:02 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, the mechanism for ohmic contact of Ti/Al bilayer formation on as-grown, etched and postetch annealed GaN surfaces were investigated. A nonalloyed Ti/Al ohmic contact to etched GaN surface, with postetch annealing prior to metal deposition,
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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