GaN Schottky diode rectifiers with reverse breakdown (V-RB) > 2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of V-RB and forward turn-on voltage (V-F) were measured. The V-RB values display a negative tem
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SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2
