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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38903


    Title: Temperature dependent performance of GaN Schottky diode rectifiers
    Authors: Cao,XA;Dang,GT;Zhang,AP;Ren,F;Pearton,SJ;Lee,CM;Chuo,CC;Chyi,JI;Chi,GC;Han,J;Chu,SNG;Wilson,RG
    Contributors: 物理研究所
    Keywords: BREAKDOWN;FIELD
    Date: 2000
    Issue Date: 2010-07-08 13:42:31 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN Schottky diode rectifiers with reverse breakdown (V-RB) > 2 kV were fabricated on epitaxial layers grown on sapphire substrates. The temperature dependence of V-RB and forward turn-on voltage (V-F) were measured. The V-RB values display a negative tem
    Relation: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2
    Appears in Collections:[物理研究所] 期刊論文

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