This study investigated localized states from In0.36Ga0.64N epitaxial film grown on a Si (111) substrate by performing macro-photoluminescence, micro-photoluminescence and time-resolved micro-photoluminescence experiments. Experimental data revealed two localized states - single and extended. The single localized state is a single-quantum-dot-like deep confined energy state, which is responsible for the bright line emissions. The extended localized state is a shallow confined energy state, which is related to a broad background emission. This work suggests that the origin of single and extended localized states is the indium-rich InxGa1-xN cluster and the spatial indium concentration fluctuation, respectively. (C) 2008 Elsevier Ltd. All rights reserved.
