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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39048


    Title: The doping of GaN with Mg diffusion
    Authors: Pan,CJ;Chi,GC
    Contributors: 物理研究所
    Keywords: MOLECULAR-BEAM EPITAXY;P-TYPE GAN;PHOTOLUMINESCENCE
    Date: 1999
    Issue Date: 2010-07-08 14:03:18 (UTC+8)
    Publisher: 中央大學
    Abstract: The characteristics of GaN films diffused with Mg were studied. The undoped GaN films were grown by metalorganic chemical vapor deposition (MOCVD). The photoluminescence (PL) spectra of Mg diffused GaN showed a broad violet emission. The Mg-diffused GaN was p-type conductivity with a mobility of 13 cm(2)/V-s and a hole concentration of 3 x 10(15)/cm(3) at a diffusion temperature of 1100 degrees C. However, the samples, which were diffused at 1100 degrees C, showed a red emission peak after the annealing process. From the diffusion depth profile observed by secondary ion mass spectrometry (SIMS), we obtained the activation energy of 1.3 eV for Mg diffusion in GaN. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[物理研究所] 期刊論文

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