The doping of GaN with Mg diffusion

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題名:	The doping of GaN with Mg diffusion
作者:	Pan,CJ;Chi,GC
貢獻者:	物理研究所
關鍵詞:	MOLECULAR-BEAM EPITAXY;P-TYPE GAN;PHOTOLUMINESCENCE
日期:	1999
上傳時間:	2010-07-08 14:03:18 (UTC+8)
出版者:	中央大學
摘要:	The characteristics of GaN films diffused with Mg were studied. The undoped GaN films were grown by metalorganic chemical vapor deposition (MOCVD). The photoluminescence (PL) spectra of Mg diffused GaN showed a broad violet emission. The Mg-diffused GaN was p-type conductivity with a mobility of 13 cm(2)/V-s and a hole concentration of 3 x 10(15)/cm(3) at a diffusion temperature of 1100 degrees C. However, the samples, which were diffused at 1100 degrees C, showed a red emission peak after the annealing process. From the diffusion depth profile observed by secondary ion mass spectrometry (SIMS), we obtained the activation energy of 1.3 eV for Mg diffusion in GaN. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
顯示於類別:	[物理研究所] 期刊論文

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