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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39132


    Title: Improving the transient response of a Si metal-semiconductor-metal photodetector with an additional i-a-SiGe:H film
    Authors: Laih,LH;Wang,JC;Chen,YA;Tsay,WC;Jen,TS;Chen,JS;Hong,JW
    Contributors: 物理研究所
    Keywords: SILICON
    Date: 1997
    Issue Date: 2010-07-08 14:05:55 (UTC+8)
    Publisher: 中央大學
    Abstract: An annealed intrinsic hydrogenated amorphous silicon germanium (i-a-SiGe:H) barrier layer deposited on a Si wafer ([111],4 k Ohm-cm) was employed to fabricate a planar interdigitated metal-semiconductor-metal photodetector (MSM-PD). At a bias of 15 V, and an incident light wavelength of 850 nm, this Si-based MSM-PD with an annealed 70 nm i-a-SiGe:H film had a responsivity of about 0.32 A/W, and a dark current density of around 400 fA/mu m(2). Also; the temporal response of this device had a rise time of 21 ps, a fall-time of 236 ps and a full-width at half-maximum (FWHM) of 51 ps.
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    Appears in Collections:[物理研究所] 期刊論文

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