An annealed intrinsic hydrogenated amorphous silicon germanium (i-a-SiGe:H) barrier layer deposited on a Si wafer ([111],4 k Ohm-cm) was employed to fabricate a planar interdigitated metal-semiconductor-metal photodetector (MSM-PD). At a bias of 15 V, and an incident light wavelength of 850 nm, this Si-based MSM-PD with an annealed 70 nm i-a-SiGe:H film had a responsivity of about 0.32 A/W, and a dark current density of around 400 fA/mu m(2). Also; the temporal response of this device had a rise time of 21 ps, a fall-time of 236 ps and a full-width at half-maximum (FWHM) of 51 ps.
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
