A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39165

Title:	A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
Authors:	Guo,JD;Lin,CI;Feng,MS;Pan,FM;Chi,GC;Lee,CT
Contributors:	物理研究所
Keywords:	SINGLE-CRYSTAL GAN;METAL
Date:	1996
Issue Date:	2010-07-08 14:06:58 (UTC+8)
Publisher:	中央大學
Abstract:	Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5 x 10(17) to 1.7 x 10(19) cm(-3). The lowest value for the specific contact resistivity of 6.5 x 10(-5) Ohm cm(2) is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. (C) 1996 American Institute of Physics.
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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