A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

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题名:	A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
作者:	Guo,JD;Lin,CI;Feng,MS;Pan,FM;Chi,GC;Lee,CT
贡献者:	物理研究所
关键词:	SINGLE-CRYSTAL GAN;METAL
日期:	1996
上传时间:	2010-07-08 14:06:58 (UTC+8)
出版者:	中央大學
摘要:	Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5 x 10(17) to 1.7 x 10(19) cm(-3). The lowest value for the specific contact resistivity of 6.5 x 10(-5) Ohm cm(2) is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. (C) 1996 American Institute of Physics.
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[物理研究所] 期刊論文

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