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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39168


    Title: AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology
    Authors: Chang,SJ;Sheu,JK;Su,YK;Jou,MJ;Chi,GC
    Contributors: 物理研究所
    Keywords: GAP WINDOW LAYER
    Date: 1996
    Issue Date: 2010-07-08 14:07:03 (UTC+8)
    Publisher: 中央大學
    Abstract: An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60 mcd/S-r at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
    Appears in Collections:[物理研究所] 期刊論文

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