AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39168

Title:	AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology
Authors:	Chang,SJ;Sheu,JK;Su,YK;Jou,MJ;Chi,GC
Contributors:	物理研究所
Keywords:	GAP WINDOW LAYER
Date:	1996
Issue Date:	2010-07-08 14:07:03 (UTC+8)
Publisher:	中央大學
Abstract:	An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60 mcd/S-r at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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