摘要 在逐漸講求環保的現代，人類開始追求節省能源與無污染的照明設備，發光二極體(LED)具備以上的優點並且即將取代過去傳統的燈泡，但是發光二極體(LED)的發光效率是否良好，其中一個影響因素就是熱，熱會使發光二極體的效率降低，所以散熱的好壞會影發光二極體(LED)的發光效率，因此如何將發光二極體(LED)貼附在散熱良好的基板上，以增加其散熱的效率，是目前我們積極研究的方向。 目前應用在晶圓鍵合(Wafer bonding)上的金屬材料眾多，例如:金、錫、矽、銅等，本研究的重點著重於金與矽在共金點形成金矽合金，利用此特性應用於發光二極體(LED)與矽基材的貼合。金矽介面是採用(100)面與(111)面的矽晶圓，在其表面蒸鍍一層金層並且在不同溫度與時間下加熱，我們發現金與矽介面之間的反應會與矽晶圓晶體的排列方向有重要關聯性。 Abstract: Recently, people are seeking the lighting source which consumes less energy and has no pollution. Light Emitting Diode (LED) has the advantages over the traditional lamps in the future. One issue of the high-power of LED is the heating generation in the active layer. The heating generation will decay the lighting performance. Therefore, the thermal dissipation controls the development of HB LED and the goal of our investigation is to increase the efficiency of the thermal dissipation. There are many materials used for wafer bonding presently, for example, Au, Sn, Si, and Cu and so on. In this study, we focus on the mechanism of Au-Si formation and we use the Au-Si alloy to bond the GaN LED wafers with Si substrates. There were two kinds of Si wafers (100) and (111) used for Au-Si wafer bonding. We deposited the Au layer on the wafers and annealed in the various temperatures and times. We found that the crystallography of Si wafers would affect the Au-Si inter-reaction.
