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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39360


    Title: PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    Authors: LIU,DG;CHANG,KH;LEE,CP;HSU,TM;TIEN,YC
    Contributors: 物理研究所
    Keywords: INTERBAND-TRANSITIONS;GALLIUM-ARSENIDE;DEPLETION REGION;LAYER;DIFFUSION;SILICON;GE
    Date: 1992
    Issue Date: 2010-07-08 14:13:22 (UTC+8)
    Publisher: 中央大學
    Abstract: Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[物理研究所] 期刊論文

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