EXCITONS AND INTERBAND-TRANSITIONS IN III-V SEMICONDUCTOR SUPERLATTICES

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题名:	EXCITONS AND INTERBAND-TRANSITIONS IN III-V SEMICONDUCTOR SUPERLATTICES
作者:	YOUNG,PM;HUI,PM;EHRENREICH,H
贡献者:	物理研究所
关键词:	QUANTUM-WELL STRUCTURES;OPTICAL-PROPERTIES;EFFECTIVE MASSES;GAAS-GA1-XALXAS;ABSORPTION;ENERGY
日期:	1991
上传时间:	2010-07-08 14:14:04 (UTC+8)
出版者:	中央大學
摘要:	The fundamental optical absorption of In1-xGaxAs/In1-yAlyAs and GaAs/Ga1-xAlxAs superlattices is calculated quantitatively using superlattice K.p theory. Electron-hole,Coulomb interactions yielding excitons and interband-transition Sommerfeld enhancement are incorporated. These fast, nonvariational calculations yield optical structure within 2-3 meV and absolute absorption coefficients within 10% of experimental results for all but one of the twelve samples analyzed. Constituent bulk parameters and band offsets constitute the only input. Computer requirements are very modest. Calculations for different band offsets and other interface parameters using this versatile approach permit estimates of physically important quantities of relatively unexplored heterostructure systems, for example, II-VI superlattices.
關聯:	PHYSICAL REVIEW B
显示于类别:	[物理研究所] 期刊論文

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