EXCITONS AND INTERBAND-TRANSITIONS IN III-V SEMICONDUCTOR SUPERLATTICES

NCU Institutional Repository > 理學院 > 物理研究所 > 期刊論文 > Item 987654321/39381

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39381

題名:	EXCITONS AND INTERBAND-TRANSITIONS IN III-V SEMICONDUCTOR SUPERLATTICES
作者:	YOUNG,PM;HUI,PM;EHRENREICH,H
貢獻者:	物理研究所
關鍵詞:	QUANTUM-WELL STRUCTURES;OPTICAL-PROPERTIES;EFFECTIVE MASSES;GAAS-GA1-XALXAS;ABSORPTION;ENERGY
日期:	1991
上傳時間:	2010-07-08 14:14:04 (UTC+8)
出版者:	中央大學
摘要:	The fundamental optical absorption of In1-xGaxAs/In1-yAlyAs and GaAs/Ga1-xAlxAs superlattices is calculated quantitatively using superlattice K.p theory. Electron-hole,Coulomb interactions yielding excitons and interband-transition Sommerfeld enhancement are incorporated. These fast, nonvariational calculations yield optical structure within 2-3 meV and absolute absorption coefficients within 10% of experimental results for all but one of the twelve samples analyzed. Constituent bulk parameters and band offsets constitute the only input. Computer requirements are very modest. Calculations for different band offsets and other interface parameters using this versatile approach permit estimates of physically important quantities of relatively unexplored heterostructure systems, for example, II-VI superlattices.
關聯:	PHYSICAL REVIEW B
顯示於類別:	[物理研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	393	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing