本研究首度提出新穎且有效的兩次陽極氧化製程在矽晶基材上製備孔洞規則有序排列之超薄陽極氧化鋁模板，其孔徑可調控在70-90 nm之間，且深寬比可控制在4:1以下，此一超薄陽極氧化鋁模板相當適合製作許多可調控尺寸之奈米結構，而不需要複雜的微影技術。 本研究也進一步利用所製備具有孔洞規則排列之超薄陽極氧化鋁充當模板，搭配物理氣相沉積技術鍍製出鎳金屬奈米點陣列。經由SEM、AFM與TEM等分析儀器鑑定得知所製備點陣大小十分均一，點陣大小平均為70-80 nm，且排列之週期與所使用之氧化鋁奈米模板相同。藉由TEM及選區電子繞射(SAED)圖形分析鑑定其晶體結構，經分析其繞射環後，可確定所鍍製之奈米點陣為具多晶結構之純鎳金屬點陣。 除此之外，本實驗也利用上述製備出之規則有序之鎳金屬奈米點陣列作為遮罩，搭配金屬催化蝕刻法成功製備出大量尺寸均一之奈米線，並以SEM、TEM等分析儀器確定此奈米線之尺寸約在80-90 nm之間，並經由SAED鑑定奈米線之晶體結構發現，所製備之奈米線均為矽單晶奈米線，且其軸向皆沿[001]方向與所使用之(001)Si單晶晶片之晶向相同。 In the study, we have proposed a novel and cost-effective technique to fabricate ultra-thin anodic aluminum oxide (AAO) templates with ordered nanopore structures on Si substrates. The pore diameters of the ultra-thin AAO templates can be precisely controlled in the range of 70 to 90 nm, and their aspect ratio can be made 4:1 or less. The ultra-thin AAO membrane can serve as the template for the fabrication of various OD nanostructures without complex lithography. The present study has demonstrated that large-area well-ordered Ni metal nanodot arrays were successfully fabricated on (001) Si substrates using ultra-thin AAO as the shadow masks for the deposition of Ni thin films. The Ni nanodots produced have the shape of semi-sphere and their average diameter was about 7x nm, corresponding to the pore size of the ultra-thin AAO template. Based on the TEM and selected-area electron diffraction (SAED) analysis, it is found that all the Ni nanodots produced were polycrystalline and these Ni nanodots possess a FCC structure. In addition, the periodic Ni nanodots array can be served as the hard masks for the fabrication of Si nanowires (SiNWs). This study has also demonstrated that high density SiNWs were successfully produced on (001) Si substrates by using the Ni nanodot masks in conjunction with the Au-assisted selective etching process. TEM and SAED analysis indicated that all the SiNWs produced were single crystalline and their axial orientations were along [001] direction.
