絕緣層矽晶（Silicon on insulator, SOI）材料結構是目前半導體製程中最具發展性的材料之一，可以有效解決奈米尺度下所會遭遇到的問題，如漏電流、閉鎖效應。而Smart-Cut?製程是近來最常用於製作絕緣層矽晶材料之技術。其原理是利用高劑量的氫離子佈植於矽晶圓內，再經晶圓鍵合製程與退火處理，使氫離子聚集產生剝離以達到薄膜轉移之目的。但是離子佈值設備高昂，使用高強度離子束時容易損傷晶圓，且佈值深度難以超過1μm。 本實驗研究之目的為使用電化學蝕刻的方式，在不同的蝕刻參數下，以電化學蝕刻重?雜之P型矽晶圓，蝕刻出不同構造的多孔矽結構，再輔以Argon高溫退火處理，進而做出具有深埋破裂層與數μm厚的多孔回復晶矽薄膜。多孔回復晶矽薄膜可沿著深埋破裂層施以微小應力而產生剝離，達到薄膜轉移之目的。和Smart-Cut?製程相比，可以完成數μm厚的薄膜轉移，成本又便宜非常多。 The Silicon on Insulator (SOI) is one of the most developmental material in the process of semiconductor now, which can effectively solve the problem in the process of nanometer scale , like leakage effect, latch up. Smart-Cut? is a common technology for manufacturing the SOI. By implanting the high dosage of hydrogen ions into the silicon wafers, followed with wafer bonding process and annealing, the hydrogen ions will gather and crack to finish Layer Transfer. But the implanting depth is difficult to over 1 μm and implanting the high dosage of hydrogen ions may damage the silicon wafer, moreover, the equipment is expensive. This purpose of the thesis is to fabricating some different porous silicon layers by using electrochemical etching with specific parameters and the heavily doped P-type silicon wafer. Followed with Argon high temperature annealing, the porous silicon with a buried separation layer and capping cavity-free layer is finish.The capping cavity-free layer can be split when a small stress is applied on the buried separation layer. It provides another process to fabricate SOI material. Compared to Smart-Cut? , Our process can make thicker layer transfer and the price is cheaper.
