我們將利用電漿輔助分子束磊晶系統成長氧化鋅、硒化鋅及氧硒化鋅化合物。藉由硒化鋅直接能隙與高能隙特性，並可以加入氧後的能帶彎曲的現象，將以此材料成長於傳統三層堆疊太陽能池上，成為四層堆疊太陽能電池，可以吸收從紫外延續到紅外光的能量，並提升太陽能電池之開路電壓。且於同一成長腔體內，成長氧化鋅透明導電層於太陽能電池表面，對於提升太陽能電池的效率將具有相當大的助益。 We aim to grow ZnSe, ZnSeO alloys, and ZnO by plasma-assisted molecular beam epitaxy. Due to the direct band gap, and high band gap, band bap bowing effect, one can vary the ratio of Se and O to tune the band gap of this material and grow the material on triple-junction solar cell as the forth junction to assist the absorption from violet to infrared and increase the open-circuit voltage. The ZnO transparent conductive layer is deposited on the top of the solar cell for n-type electrode in the same growth chamber. Therefore, it might increase the efficiency of multi-junction solar cells. 研究期間：9901 ~ 9912
