本研究主要分為兩部分，第一部分主要為在(001)矽晶基材上製備出準直規則排列且尺寸大小可調變的一維矽晶奈米結構陣列，及其性質檢測。而第二部分則利用在矽晶奈米線上沉積適量的鎳金屬薄膜並進行熱退火處理製程步驟在矽晶基材上製備出準直有序排列的鎳矽化物奈米線陣列。 也將對所製備出之各式一維矽晶及鎳矽化物奈米結構陣列之表面形貌、晶體結構、成長動力學、表面濕潤行為、光學特性及場發射性質，利用掃描式電子顯微鏡、穿透式電子顯微鏡、選區電子繞射分析、接觸角量測儀及電子場發射量測進行一系列有系統的分析。 This study is divided into two parts. The first part mainly focuses on the on the synthesis and characterization of well-ordered arrays of size-controlled, vertically-aligned 1D Si nanostructure on the (001)Si substrates and their properties, and the other part focuses on the growth of periodic vertically-aligned Ni silicide nanowire arrays on Si substrates by appropriate Ni thin film deposition method and heat treatments. The surface morphologies, crystal structures, growth kinetics, surface wettability, optical and field emission properties of the produced nanowire structures were systematically characterized using SEM, TEM, SAED techniques, water contact angle measurement system, and electron emission measurement system.
