本論文旨在使用砷化鎵與互補式金屬氧化物半導體製程，研究及實現不同架構的寬頻混波器。論文內包含三種架構的寬頻混波器，分別陳述於第三、四和五章，第六章將三種架構的寬頻混波器做總結。 第二章首先介紹傳統單端式混波器之各種實現方法，簡述閘極驅動混波器之基本原理，推導出轉換增益的公式並探討其直流偏壓和電晶體尺寸對轉換效率的影響。使用達靈頓單元取代單一電晶體的來設計寬頻單端式閘極驅動電晶體混波器，並在互補式金屬氧化物半導體製程與砷化鎵製程分別實現介於20~70和25~45 GHz，具有5.5和12 dB轉換增益，本地振盪功率-1和2 dBm之寬頻混波器，最後呈現完整模擬與量測之結果，並與相關文獻比較討論。另外，利用前述之達靈頓單元，使用砷化鎵異質接面雙極性二極體及高速電子遷移率電晶體製程技術，模擬分析四種組態之達靈頓分佈式混波器，並探討四種架構之閘極與汲極傳輸線之特性，以實現寬頻分佈式混波器。在介於6~33 GHz間具有平坦的轉換增益，相較於其他砷化鎵製程之分佈式混波器，其有較小的晶片面積，及較低的本地振盪驅動功率。第五章利用電感補償技巧來改善的吉伯爾單元混波器高頻響應，介紹吉伯爾單元混波器之原理，並利用砷化鎵異質接面雙極性電晶體及高速電子遷移率電晶體製程技術完成寬頻混波器。加入電感補償技巧後，大幅改善吉伯爾混波器高頻響應，並探討轉導級與開關級的頻率響應與轉換增益、頻寬及轉換增益之理論計算分析，並完整量測結果驗證；此外還利用回授差動放大器以增加混波器輸出中頻之3 dB頻寬。最後，與相關文獻比較及做一完整討論。 The thesis aims to study and implement different topologies of the broadband mixer using GaAs and CMOS processes. Three circuit topologies for the broadband mixer are presented in Chapter 3, 4, and 5, respectively. The conclusion is summarized in Chapter 6. The fundamental of the mixer and the processes are presented in Chapter 2. Some conventional single-ended mixers with various mechanisms are described in Chapter 3, and the fundamental of the gate-pumped mixer is also outlined. The broadband mixers are achieved using Darlington pair instead of a single transistor. The conversion gain of the mixer is investigated, the effect of the DC bias and the transistor size to conversion efficiency are also addressed. A 20~70 GHz single-ended Darlington mixer is implemented using 0.13 ?m CMOS process, the mixer has a conversion gain of 5.5 dB with a LO power of -1 dBm. In addition, a 25~45 GHz single-ended Darlington mixer is implemented using 0.5 ?m GaAs PHEMT process, the mixer has a conversion gain of 12 dB with a LO power of 2 dBm. The simulation and measurement are demonstrated. Moreover, a distributed mixer is implemented using the Darlington pair. The Darlington pair composes of GaAs HBT and HEMT, and broad bandwidth and high conversion gain can be both achieved using the proposed topology. The simulations of four distributed mixers are presented, and the theoretical conversion gain of the distributed mixer is carefully compared with the experimental results. The characteristic of the transmission lines at the gate and drain are also discussed. A 6~33 GHz distributed mixer with flat conversion gain is implemented using 2 ?m /0.5 ?m GaAs HBT-HEMT process, and the mixer has the advantages of the small chip size and the low LO power. The Gilbert-cell mixer with inductive peaking is presented in Chapter 5. The fundamental of the Gilbert-cell mixer is introduced, and the transconductance stage and the switch stage are designed using various topologies with the HBT and HEMT to achieve broad bandwidth and good conversion gain. The theoretical calculation for the topologies and the frequency response of the transconductance and switch stages are also presented to verify the proposed design concept. Besides, a feedback IF amplifier is used to extend the 3-dB IF bandwidth of the mixer. Finally, the comparisons with the previously reported results and the conclusion are given in Chapter 6.
