Growth Mechanism of a Ternary (Cu,Ni)(6)Sn(5) Compound at the Sn(Cu)/Ni(P) Interface

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Title:	Growth Mechanism of a Ternary (Cu,Ni)(6)Sn(5) Compound at the Sn(Cu)/Ni(P) Interface
Authors:	Huang,TS;Tseng,HW;Lu,CT;Hsiao,YH;Chuang,YC;Liu,CY
Contributors:	化學工程與材料工程學系
Keywords:	ELECTROLESS NI-P;INTERMETALLIC COMPOUNDS;FREE SOLDERS;RELIABILITY;TECHNOLOGY;COPPER
Date:	2010
Issue Date:	2012-03-27 16:25:04 (UTC+8)
Publisher:	國立中央大學
Abstract:	The growth mechanism of an interfacial (Cu,Ni)(6)Sn(5) compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni)(6)Sn(5) compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni)(6)Sn(5) compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni)(6)Sn(5) layer could be Cu diffusion in the Sn(Cu) solder matrix.
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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