Growth Mechanism of a Ternary (Cu,Ni)(6)Sn(5) Compound at the Sn(Cu)/Ni(P) Interface

NCU Institutional Repository > 工學院 > 化學工程與材料工程學系 > 期刊論文 > Item 987654321/49865

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/49865

题名:	Growth Mechanism of a Ternary (Cu,Ni)(6)Sn(5) Compound at the Sn(Cu)/Ni(P) Interface
作者:	Huang,TS;Tseng,HW;Lu,CT;Hsiao,YH;Chuang,YC;Liu,CY
贡献者:	化學工程與材料工程學系
关键词:	ELECTROLESS NI-P;INTERMETALLIC COMPOUNDS;FREE SOLDERS;RELIABILITY;TECHNOLOGY;COPPER
日期:	2010
上传时间:	2012-03-27 16:25:04 (UTC+8)
出版者:	國立中央大學
摘要:	The growth mechanism of an interfacial (Cu,Ni)(6)Sn(5) compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni)(6)Sn(5) compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni)(6)Sn(5) compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni)(6)Sn(5) layer could be Cu diffusion in the Sn(Cu) solder matrix.
關聯:	JOURNAL OF ELECTRONIC MATERIALS
显示于类别:	[化學工程與材料工程學系 ] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	564	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing