中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/49865
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 67621/67621 (100%)
造访人次 : 23073673      在线人数 : 386
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/49865


    题名: Growth Mechanism of a Ternary (Cu,Ni)(6)Sn(5) Compound at the Sn(Cu)/Ni(P) Interface
    作者: Huang,TS;Tseng,HW;Lu,CT;Hsiao,YH;Chuang,YC;Liu,CY
    贡献者: 化學工程與材料工程學系
    关键词: ELECTROLESS NI-P;INTERMETALLIC COMPOUNDS;FREE SOLDERS;RELIABILITY;TECHNOLOGY;COPPER
    日期: 2010
    上传时间: 2012-03-27 16:25:04 (UTC+8)
    出版者: 國立中央大學
    摘要: The growth mechanism of an interfacial (Cu,Ni)(6)Sn(5) compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni)(6)Sn(5) compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni)(6)Sn(5) compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni)(6)Sn(5) layer could be Cu diffusion in the Sn(Cu) solder matrix.
    關聯: JOURNAL OF ELECTRONIC MATERIALS
    显示于类别:[化學工程與材料工程學系 ] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML343检视/开启


    在NCUIR中所有的数据项都受到原著作权保护.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈  - 隱私權政策聲明