Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN

NCUIR > Engineering College > Institute of Materials Science and Engineering > journal & Dissertation > Item 987654321/50016

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50016

Title:	Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN
Authors:	Chen,IC;Chen,YD;Hsieh,CC;Kuo,CH;Chang,LC
Contributors:	材料科學與工程研究所
Keywords:	LIGHT-EMITTING-DIODES;EXTRACTION EFFICIENCY;AG;AGGLOMERATION;MECHANISM;GROWTH;ALLOY;FILMS
Date:	2011
Issue Date:	2012-03-27 16:29:05 (UTC+8)
Publisher:	國立中央大學
Abstract:	A new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6 x 10(-4) Omega cm(2) were obtained from Ag/La (150/20 nm) contact annealed at 450 degrees C for 1 min. The La overlayer was oxidized to form La(2)O(3) when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300 degrees C in air ambient. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3533673] All rights reserved.
Relation:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	746	View/Open

社群 sharing