Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN

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題名:	Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN
作者:	Chen,IC;Chen,YD;Hsieh,CC;Kuo,CH;Chang,LC
貢獻者:	材料科學與工程研究所
關鍵詞:	LIGHT-EMITTING-DIODES;EXTRACTION EFFICIENCY;AG;AGGLOMERATION;MECHANISM;GROWTH;ALLOY;FILMS
日期:	2011
上傳時間:	2012-03-27 16:29:05 (UTC+8)
出版者:	國立中央大學
摘要:	A new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6 x 10(-4) Omega cm(2) were obtained from Ag/La (150/20 nm) contact annealed at 450 degrees C for 1 min. The La overlayer was oxidized to form La(2)O(3) when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300 degrees C in air ambient. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3533673] All rights reserved.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
顯示於類別:	[材料科學與工程研究所 ] 期刊論文

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