We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 x 10(-10) W and 2.26 x 10(9) cmHz(0.5)W(-1), respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 x 10(-6) W and 4.44 x 10(5) cmHz(0.5)W(-1), respectively, for the PD prepared on a conventional sapphire substrate.
