English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23139925      Online Users : 268
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51007

    Title: Surface characterization and properties of silicon nitride films prepared by ion-assisted deposition
    Authors: Ku,SL;Lee,CC
    Contributors: 光電科學與工程學系
    Date: 2010
    Issue Date: 2012-03-27 18:15:22 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Silicon nitride (SiN) films had been prepared at low substrate temperature (100 degrees C) using the ion-assisted deposition (IAD) process. The films had been analyzed by the measurement of X-ray diffraction, atomic force microscopy. Fourier transform infrared spectrometry, nano indenter, and ellipsometry. The effects of N-ion current density on the surface morphology, compositional, mechanical, and infrared optical properties of SiN thin films were investigated. The results showed that the stoichiometric Si(3)N(4) thin film with desirable properties, such as continuous and smooth surface morphology, extremely low hydrogen content, mechanical strong, and low extinction coefficient, could be obtained by using the IAD technique. (C) 2010 Elsevier B.V. All rights reserved.
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明