GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51034

Title:	GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate
Authors:	Huang,CC;Chang,SJ;Kuo,CH;Ko,CH;Wann,CH;Cheng,YC;Lin,WJ
Contributors:	光電科學與工程學系
Keywords:	VAPOR-PHASE EPITAXY;LIGHT-EMITTING-DIODES;GALLIUM NITRIDE;BUFFER LAYERS;CUBIC GAN;SAPPHIRE;GROWTH;FILMS;SI;SILICON
Date:	2011
Issue Date:	2012-03-27 18:16:12 (UTC+8)
Publisher:	國立中央大學
Abstract:	We report the growth of GaN epitaxial layer on Si(001) substrate with nano-patterns prepared by dry etching facility used in integrated circuit (IC) industry. It was found that the GaN epitaxial layer prepared on nano-patterned Si(001) substrate exhibits both cubic and hexagonal phases. It was also found that threading dislocation observed from GaN prepared on nano-patterned Si(001) substrate was significantly smaller than that prepared on conventional unpatterned Si(111) substrate. Furthermore, it was found that we can reduce the tensile stress in GaN epitaxial layer by about 78% using the nano-patterned Si(001) substrate.
Relation:	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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