GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate

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题名:	GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate
作者:	Huang,CC;Chang,SJ;Kuo,CH;Ko,CH;Wann,CH;Cheng,YC;Lin,WJ
贡献者:	光電科學與工程學系
关键词:	VAPOR-PHASE EPITAXY;LIGHT-EMITTING-DIODES;GALLIUM NITRIDE;BUFFER LAYERS;CUBIC GAN;SAPPHIRE;GROWTH;FILMS;SI;SILICON
日期:	2011
上传时间:	2012-03-27 18:16:12 (UTC+8)
出版者:	國立中央大學
摘要:	We report the growth of GaN epitaxial layer on Si(001) substrate with nano-patterns prepared by dry etching facility used in integrated circuit (IC) industry. It was found that the GaN epitaxial layer prepared on nano-patterned Si(001) substrate exhibits both cubic and hexagonal phases. It was also found that threading dislocation observed from GaN prepared on nano-patterned Si(001) substrate was significantly smaller than that prepared on conventional unpatterned Si(111) substrate. Furthermore, it was found that we can reduce the tensile stress in GaN epitaxial layer by about 78% using the nano-patterned Si(001) substrate.
關聯:	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
显示于类别:	[光電科學與工程學系] 期刊論文

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