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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51918

    Title: Broadband and Low-Loss 1:9 Transmission-Line Transformer in 0.18-mu m CMOS Process
    Authors: Chiou,HK;Liao,HY
    Contributors: 電機工程學系
    Date: 2010
    Issue Date: 2012-03-28 10:10:24 (UTC+8)
    Publisher: 國立中央大學
    Abstract: This letter proposes a transmission-line transformer (TLT) with high impedance-transformation ratio of 1 : 9 for wideband power amplifier design. The 1 : 9 TLT is realized with broadside-coupled and multiple-metal stacked transmission lines and achieves a broadband impedance transformation from 5.0 +/- 0.1 Omega optimal load impedance of the power cell to 50-Omega load with a bandwidth of 4.4 to 6.6 GHz, which covers the required bandwidth of the IEEE 802.11a WLAN application. The measured minimum insertion loss is 1.07 dB at 5.8 GHz with a 3-dB bandwidth of 164%. This 1 : 9 TLT is fabricated in standard 0.18-mu m CMOS process with a chip area of 426 mu m x 589 mu m including the test pad.
    Appears in Collections:[電機工程學系] 期刊論文

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