English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 23045314      Online Users : 363
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51948


    Title: Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics
    Authors: Chien,CY;Chang,YJ;Chang,JE;Lee,MS;Chen,WY;Hsu,TM;Li,PW
    Contributors: 電機工程學系
    Keywords: PHOTOLUMINESCENCE;NANOCRYSTALS;CONFINEMENT;MATRICES;EXCITONS
    Date: 2010
    Issue Date: 2012-03-28 10:11:37 (UTC+8)
    Publisher: 國立中央大學
    Abstract: We report a simple and manageable growth method for placing dense three-dimensional Ge quantum dot (QD) arrays in a uniform or a graded size distribution, based on thermally oxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatial density in each stack can be modulated by conditions of the Ge content in poly-Si(1-x)Ge(x), oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, and photoluminescence properties of Ge QDs are systematically investigated. Optimization of the processing conditions could be carried out for producing dense Ge QD arrays to maximize photovoltaic efficiency.
    Relation: NANOTECHNOLOGY
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML204View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明