Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/51948

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51948

Title:	Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics
Authors:	Chien,CY;Chang,YJ;Chang,JE;Lee,MS;Chen,WY;Hsu,TM;Li,PW
Contributors:	電機工程學系
Keywords:	PHOTOLUMINESCENCE;NANOCRYSTALS;CONFINEMENT;MATRICES;EXCITONS
Date:	2010
Issue Date:	2012-03-28 10:11:37 (UTC+8)
Publisher:	國立中央大學
Abstract:	We report a simple and manageable growth method for placing dense three-dimensional Ge quantum dot (QD) arrays in a uniform or a graded size distribution, based on thermally oxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatial density in each stack can be modulated by conditions of the Ge content in poly-Si(1-x)Ge(x), oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, and photoluminescence properties of Ge QDs are systematically investigated. Optimization of the processing conditions could be carried out for producing dense Ge QD arrays to maximize photovoltaic efficiency.
Relation:	NANOTECHNOLOGY
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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